New recombination centers in MBE MCT layers on (013) GaAs substrates

Photomodulated Reflectance Spectroscopy of GaAsBi/GaAs layers grown by MBE

The III-bismides are considered to be a very attractive set of III-V alloys due to their potential applications in photonic and spintronic devices. The incorporation of bismuth into GaAs, with its band anti-crossing effect in the valence band of GaAs, leads to a decrease in the temperature dependence of the bandgap. Such a material may be very useful in designing temperature-insensitive semicon...

Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...

MBE Growth and Characterization of ZnTe and Nitrogen-doped ZnTe on GaAs(100) Substrates

GaInNAs ( Sb ) lasers grown on GaAs by MBE

We demonstrate the first 1.5 mm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mm. A 1.465mm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930A/cm per quantum well, a differential quantum efficiency of 0.30W/A (both facets), an ex...

InGaAsÕAlGaAs intersubband transition structures grown on InAlAs buffer layers on GaAs substrates by molecular beam epitaxy

We report on the use of InAlAs linearly graded buffer layers for improving the performance of InyGa12yAs (y.0.42)/AlGaAs intersubband transition ~ISBT! superlattice structures grown on GaAs substrates by molecular beam epitaxy. Linearly graded InAlAs buffer layers give better optical confinement in the active superlattice region, similar intersubband transition linewidths, and comparable surfac...